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VCTCXO

The temperature compensated crystal oscillator is also called the temperature compensated crystal oscillator. English abbreviated as tcxo (temperature compensated crystal oscillator) is to maintain the output frequency of the crystal oscillator within a certain accuracy range by a certain compensation method (such as capacitance compensation, thermistor network compensation, etc.) in a certain temperature range (such as Crystal oscillators of class 10-7, class 10-6). It features good startup characteristics, low power consumption, and high frequency-temperature stability. Widely used in a variety of communications, navigation, radar, satellite positioning systems, mobile communications, program-controlled telephone switches, all types of electronic measuring instruments.
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Pic. Series Product introduction Datasheet
TD14 Package Size:20.4*12.8*7.6;Frequency:2MHz~125MHz;Supply Voltage:1.8V~5.0V;Frequency stability:±0.2ppm~±2.0ppm;Output Leve:Sinewave Clipped Sinewave HCMOS/TTL;working temperature:-40℃~+90℃;
T119 Package Size:11.4*9.6*1.85;Frequency:8MHz~100MHz;Supply Voltage:1.8V~5.0V;Frequency stability:±0.2ppm~±2ppm;Output Leve:Clipped Sinewave;working temperature:-40℃~+85℃;
T22 Package Size:2.5*2.0*0.85;Frequency:9.5MHz~60MHz;Supply Voltage:1.8V~5.0V;Frequency stability:±0.2ppm~±2.0ppm;Output Leve:Clipped Sinewave HCMOS/TTL;working temperature:-40℃~+90℃;
T32 Package Size:3.2*2.5*1.0;Frequency:9.5MHz~60MHz;Supply Voltage:1.8V~5.0V;Frequency stability:±0.2ppm~±2.0ppm;Output Leve:Clipped Sinewave HCMOS/TTL;working temperature:-40℃~+90℃;
T53 Package Size:5.0*3.2*1.5;Frequency:5MHz~100MHz;Supply Voltage:1.8V~5.0V;Frequency stability:0~±2.0ppm;Output Leve:Clipped Sinewave CMOS;working temperature:-55℃~+95℃;
TT75 Package Size:7.0*5.0*1.9;Frequency:5MHz~100MHz;Supply Voltage:1.8V~5.0V;Frequency stability:0~±2.0ppm;Output Leve:Clipped Sinewave CMOS;working temperature:-55℃~+95℃;
TF75 Package Size:7.0*5.0*1.9;Frequency:5MHz~100MHz;Supply Voltage:1.8V~5.0V;Frequency stability:0~±2.0ppm;Output Leve:Clipped Sinewave HCMOS/TTL;working temperature:-55℃~+95℃;
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